Hallo
Jetzt habe ich eine Frage zum Ram.
Erstmal die Daten:
[General information]
Total Memory Size: 16 GBytes
Total Memory Size [MB]: 16384
[Current Performance Settings]
Maximum Supported Memory Clock: 1066.7 MHz
Current Memory Clock: 1063.5 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 15-15-15-36
Memory Runs At: Dual-Channel
Command Rate: 1T
Read to Read Delay (tRD_RD) Same Rank: 6T
Read to Read Delay (tRD_RD) Different Rank: 4T
Read to Read Delay (tRD_RD) Different DIMM: 7T
Write to Write Delay (tWR_WR) Same Rank: 6T
Write to Write Delay (tWR_WR) Different Rank: 4T
Write to Write Delay (tWR_WR) Different DIMM: 7T
Read to Write Delay (tRD_WR) Same Rank: 9T
Read to Write Delay (tRD_WR) Different Rank: 9T
Read to Write Delay (tRD_WR) Different DIMM: 11T
Write to Read Delay (tWR_RD) Same Rank (tWTR): 27T
Write to Read Delay (tWR_RD) Different Rank: 22T
Write to Read Delay (tWR_RD) Different DIMM: 6T
RAS# to RAS# Delay (tRRD): 6T
Refresh Cycle Time (tRFC): 374T
Four Activate Window (tFAW): 23T
Row: 0 - 8 GB PC4-19200 DDR4 SDRAM Kingston ACR24D4S7S8MB-8 --------------- (Orginal 90 €)
[General Module Information]
Module Number: 0
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: SO-DIMM
Memory Speed: 1200.5 MHz (DDR4-2400 / PC4-19200)
Module Manufacturer: Kingston
Module Part Number: ACR24D4S7S8MB-8
Module Revision: 0.0
Module Serial Number: 2923963746
Module Manufacturing Date: Year: 2016, Week: 24
Module Manufacturing Location: 4
SDRAM Manufacturer: Micron Tech.
DRAM Steppping: 4.2
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.83300 ns
Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 1200.0 MHz: 17-17-17-39
Supported Module Timing at 1066.1 MHz: 15-15-15-35
Supported Module Timing at 1066.7 MHz: 15-15-15-35
Supported Module Timing at 1000.0 MHz: 14-14-14-32
Supported Module Timing at 933.3 MHz: 13-13-13-30
Supported Module Timing at 866.7 MHz: 12-12-12-28
Supported Module Timing at 800.0 MHz: 11-11-11-26
Supported Module Timing at 733.3 MHz: 11-11-11-24
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.300 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.900 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Temperature Sensor Location: Front Side
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
Row: 2 - 8 GB PC4-17000 DDR4 SDRAM GKE800SO102408-213 (nachgekauft 60 €)
[General Module Information]
Module Number: 2
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: SO-DIMM
Memory Speed: 1067.2 MHz (DDR4-2134 / PC4-17000)
Module Manufacturer: Unknown
Module Part Number: GKE800SO102408-213
Module Revision: 0.0
Module Serial Number: 0
Module Manufacturing Date: Year: 2000, Week: 0
Module Manufacturing Location: 0
SDRAM Manufacturer: SK Hynix
DRAM Steppping: 0.0
[Module Characteristics]
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.93700 ns
Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns
CAS# Latencies Supported: 9, 11, 12, 13, 14, 15, 16
Minimum CAS# Latency Time (tAAmin): 13.500 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns
Minimum Row Precharge Time (tRPmin): 13.500 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
Supported Module Timing at 1066.1 MHz: 15-15-15-36
Supported Module Timing at 1066.7 MHz: 15-15-15-36
Supported Module Timing at 1000.0 MHz: 14-14-14-33
Supported Module Timing at 933.3 MHz: 13-13-13-31
Supported Module Timing at 866.7 MHz: 12-12-12-29
Supported Module Timing at 800.0 MHz: 11-11-11-27
Supported Module Timing at 666.7 MHz: 9-9-9-22
Supported Module Timing at 600.0 MHz: 9-9-9-20
Minimum Active to Active/Refresh Time (tRCmin): 46.500 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.628 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Temperature Sensor Location: Front Side
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
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System ist am laufen!
Da ich 2 Wochen Zeit für umtausch habe wollte ich mal die Fachleute fragen in wie weit sich der Nachgekaufte Ram auf Row 2 auf Stabielität und Geschwindigkeit auswirkt.
Der Preisunterschied zu den Orginal Ram liegt immerhin bei 30 €.
Kann mir da jemand behilflich sein ?
Wäre sehr verbunden !
Sollte ich mir doch einen orginalen DDR4 PC4-19200 Ram Dual-Chanel kaufen ?
MfG
